cssmi-donauctoi ^pioaacti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 switchmode ii series npn silicon power transistors the mj 13080 and mj1308t transistors are designed for high* voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularlysuitedfor line-operated switch- mode applications such as: ? switching regulators b ? inverters 5 ? solenoid and relay drivers t w ? motor controls l-k| ? deflection circuits xti/ fast turn-off times -x, 100 ns inductive fall time @ 25c (typ] 150 ns inductive crossover time @ 2sc (typ| 400 ns inductive storage time 25c (typ) operating temperature range -85 to+200c 1 00c performance specified for: reverse-biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents maximum ratings rating symbol collector-emitter voltage vceo collector-emitter voltege vcev emitter base voltage veb collector current ? continuous irj -pa?k(1) icm base current ? continuous ib -peak(l) ibm total power dissipation @ tc - 26c pd @tc'1ooc derate above 25c operating end storage junction tj, tsig temperature range thermal characteristics characteristic maximum lead temperature for soldering purposes: 1/8' from cose for 5 seconds mj 13080 400 650 mj13081 unit 450 vdc 750 vdc 6.0 vdc 8.0 adc 12 3.0 adc 6.0 iso watts 856 0.86 w/c -66 to +200 c symbol tl mai unit 1 17 c/w 27b c (1) pulse test: pulse width - 5 ms, duty cycle f, 10%. MJ13080 mj 13081 8 ampere npn silicon power transistors 400 and 460 volts iso watts designer's data for "woiet case" conditions the designer's data sheet permits the design of most c rcuits entirely from the information presented. limit data ? representing device characteristics boundaries ? are given to facilitate "worst cese" design. ^ a -i p'~] - rc r1 tt^ ~~ mi mm r ' ? ? j i lurmn l^f9^ t^^^h 4dtu 1 d.uiniia*ef|ahdvmcmtblii i cd h sums moic m ? b*tuh i raiitiami idliunu ton \t v^j i0t ii1i1 t tiu>]tiu?ll< ttml 1* ri 1 "ft : ft if" tfflt " "j ml! ll .t ^-^hffil^ nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of"going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
MJ13080, mj13081 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol typ off characteristics 11) collector-emitter sustaining voltage (table 1 ) dc = 100ma, ib -0) mj13o80 mj13081 collector cutoff current c/cev - rated value. vbe(oh| ? 1 ,6 vdc) (vcev = to""* value, vbe(off ) = ' 6 vdc, tc = 1 00c| collactor cutoff currant wce = rated vcev. rbe ? so n, tc = iooo emitter cutoff current (veb = 6.0vdc, ic = 0) vceo(sus) "cev icer 8.0 - i ? - - _ 1.0 3.o 2.0 1.5 1.5 ? vdc vdc dynamic characteristics output capacitance 'd tr is if ? ? ? ? 0.025 0.10 0.50 016 0.05 o.go 1.50 o.eo cs inductive lot a. clamped (table 1) storage time crossover time fall time storage time crossover time fall time (lqpk| = b.oa. ib1 = 0.7 adc, vbe(off)=b-ovllc!' vce(pk|-250v) (tj*100c) (tj=25c) 'sv 'c 111 tsv 'c tfi ? ? ? ? ? ? 0.76 0.22 0.175 0.40 o.16 0.10 2.20 0.40 0.36 ? (is (11 putm ten: pw ? 300 (is. duly cycl. ?*. jc_ ib
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